MIMMG200DR120UA 1200v 2 0 0 a igb t module r oh s c om plia nt fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y positive t e mperatur e coe f ficient w i th fa s t free-w h e e l i ng diod e s applica t ions invertor conv ertor w elder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s v 0 0 2 1 e g a t l o v r e t t i m e - r o t c e l l o c v ges gate - emitter v o lt age 20 v t c a 0 0 3 c 5 2 = i c dc col l ector c u rrent t c a 0 1 2 c 0 8 = t c = 25c, t p = 1 ms 600 a i c pul s pulse d col l ect o r curre nt t c = 80c, t p = 1 ms 420 a p t o t w 0 0 4 1 t b g i r e p n o i t a p i s s i d r e w o p t j c 0 5 1 + o t 0 4 - e g n a r e r u t a r e p m e t n o i t c n u j t s t g c 5 2 1 + o t 0 4 - e g n a r e r u t a r e p m e t e g a r o t s v iso l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i free-wheeling diode v rrm v 0 0 2 1 e g a t l o v e s r e v e r e v i t i t e p e r t c a 0 5 2 c 5 2 = i f(a v ) a vera ge fo r w a rd curre nt t c a 0 7 1 c 0 8 = i f(rms) a 0 5 2 t n e r r u c d r a w r o f s m r t j = 45c , t= 10ms, sine 186 0 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t j = 45c, t= 8.3 ms, sine 192 0 a gd series module
MIMMG200DR120UA electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed thermal and mechanica l charac t eristics sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v ge( t h ) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 8 ma 5 6.2 7 v i c = 200a, v g e =15v , t j = 25c 1.8 v v c e (sa t ) collector - emitter saturatio n v o l t age i c = 200a, v g e =15v , t j = 125c 2.0 v v c e = 1200 v , v g e = 0 v , t j = 25c 0.4 1 ma i c e s coll ector l e a k age c u rrent v c e = 1200 v , v g e = 0 v , t j = 125c 6 ma i ges gate leak age current v c e = 0 v , v g e = 20v -400 400 na q g e gate charge v c c = 600 v , i c =200a , v g e = 15v 210 0 nc c i e s f n 9 . 4 1 e c n a t i c a p a c t u p n i c oes ou tput cap a c i t ance 1 . 04 n f c r e s revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 7 n f t d ( on) s n 5 2 1 e m i t y a l e d n o - n r u t t r s n 0 6 e m i t e s i r t d ( o f f ) s n 0 2 4 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =200a r g =5 , v g e = 15v t j = 25c inductive l o ad 60 n s t d ( on) s n 5 3 1 e m i t y a l e d n o - n r u t t r s n 0 6 e m i t e s i r t d ( o f f ) s n 0 9 4 e m i t y a l e d f f o - n r u t t f fall t i me v c c = 600 v , i c =200a r g =5 , v g e = 15v t j = 125c inductive l o ad 75 n s 17 mj e o n t u rn - on s w itc h i n g ener g y 24.8 mj 13.6 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 600 v , i c = 200a t j = 25 c r g =5 t j = 125c v g e = 15v t j = 25 c inductive l o ad t j = 125c 21.6 mj free-wheeling diode i f = 200a , v g e =0v , t j = 25c 2.0 2.44 v v f f o r w ard v olt age i f = 200a , v g e =0v , t j = 125c 1.7 2.20 v t r r s n 0 6 2 e m i t y r e v o c e r e s r e v e r i rrm a 0 1 1 t n e r r u c y r e v o c e r e s r e v e r . x a m q r r revers e reco ver y c har ge i f = 200a , v r = 800v d i f /d t= -100 0a/ s t j = 125c 13. 5 c sy mbol para mete r t est condit i o n s min. t y p. max. unit r thjc junctio n -to-ca se t hermal r e sist ance per igb t 0.09 k / w r t hjcd junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.22 k / w t orque modu le-to-si n k recomme n d e d m6 3 5 n m t orque modu le electro des recomme n d e d m6 2.5 5 n m w e ight 285 g
MIMMG200DR120UA i c (a) v c e (sa t ) v f i gure 1 . t y pic a l output charac teristics t j =125c t j =25c 600 500 400 300 200 100 0 0 0.5 1 1 . 5 2 2.5 3 3.5 8 0 100 v g e v f i gure 2 . t y pic a l t ransfer char a cteristics 1 4 12 10 8 6 4 2 0 0 100 i c (a) 200 300 400 500 600 v ce =20v e o n e o f f ( mj ) 240 200 160 120 80 40 0 100 300 i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent v cc = 600v r g = 5 ohm v g e = 15v t j =125c e o n e o f f 700 600 500 400 200 0 4 0 6 0 2 0 0 0 5 1 0 1 5 20 25 30 e o n e o f f ( mj ) e o n e o f f r g ohm f i gure 4 . s w itc h i n g ener g y vs. gate resistor 3 5 v cc = 600v i c =200 a v g e = 15v t j =125c t ( n s ) 1 0 3 1 0 2 0 60 180 i c a figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 600v r g = 5 ohm v g e = 15v t j =125c t d ( o f f ) 420 360 300 240 120 1 0 1 0 1 1 0 5 1 0 1 5 20 25 30 r g ohm figure6. s w itc h ing t i mes vs. gate resistor 3 5 v cc = 600v i c =200 a v g e =15v t j = 125 c t ( n s ) 1 0 3 1 0 2 t d ( o n ) t r t f t d ( o f f ) t d(on) t f t r t j =125c t j =25c 1 0 4
MIMMG200DR120UA i c p u l s ( a ) t j =150c t c =25c v g e =15v c ( n f ) v c e v f i gure 8 . t y pic a l cap a c i t anc e s vs. v c e v g e (v) q g c f i gure 7 . ga te char ge char a c teristics 0 20 25 10 15 5 0.4 0 0 . 8 1.2 1.6 2.0 v g e =0v f=1mh z c ies c o e s c res 0.1 1 1 0 0 5 1 0 1 5 20 25 30 3 5 t c case t e mp erature( c ) f i gure1 1. rate d curre nt vs. t c i c ( a ) t j =150c v g e 15v 0 125 150 175 50 7 5 100 250 300 50 100 150 200 0 25 300 0 360 0 500 400 300 200 100 0 200 600 v c e v f i gure 9 . reve r se biase d sa fe opera ting are a 140 0 120 0 100 0 800 400 0 240 0 180 0 120 0 600 0 0 200 400 600 800 100 0 120 0 v c e v f i gure 10. shor t circuit sa fe opera ti ng are a 140 0 i csc ( a ) t j =150c t c =25c v g e =15v t s c 10 s t j =25c t j = 125 c v f v f i gure 12. diode fo r w a rd c h a ra cte ri sti cs 0 0 100 300 400 600 500 0.5 200 1. 0 1 . 5 2.0 2.5 3 3.5 i f ( a ) v cc = 600v i c =200 a t j =25c 600 700 350 100
MIMMG200DR120UA dimens i o ns in mm f i gure 16. pack age outli nes z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 13. t ransient t hermal imped ance of igbt dut y 0.5 0.2 0.1 0.05 single p ulse dut y 0.5 0.2 0.1 0.05 single p ulse 1 0 - 4 1 0 - 4 1 0 - 3 1 0 - 2 1 0 - 1 1 1 0 - 3 1 0 - 2 1 0 - 1 1 1 1 1 0 - 1 1 0 - 1 1 0 - 2 1 0 - 2 1 0 - 3 1 0 - 3 1 0 - 4 1 0 - 4 z t hjc ( k/w ) rect a n gul ar pulse d u ratio n (secon ds) f i gure 14. t ransient t hermal imped ance of diod e 93.0 28.0 28.0 16.0 20.0 108.0 m6 30.0 30.5 8.5 62.0 48.0 6.0 6.0 2 .8 x 0 .5 1 2 3 4 5 6 7 15.0 22.0 6.0 1 8 6.5 f i gure 15. circ u i t dia gram 1 2 3 6 7
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